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April 27 to May 1, 2009

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AT A GLANCE - MEETINGS AT NIST

MONDAY - 4/27
10:45 AM - New Light on an Old Problem: The Boundary of Flowing Liquids
12:00 PM - Spectrophotometry Workshop
TUESDAY - 4/28
11:00 AM - Exploring the Structure of the Neutron with Electron-Scattering Experiments Using Polarized Helium-3 Targets
WEDNESDAY - 4/29
10:00 AM - Challenges in Understanding Intergranular Fracture in Polycrystals
10:30 AM - CSTL Colloquium: "Measuring the Microbial World"
2:00 PM - Instrumentation for a New Realm of Imaging Using Neutron Radiation
THURSDAY - 4/30
10:00 AM - Compressive Properties of Cu with Sub-Micron to Nanometer Grain Sizes: Synthesis, Experiment, and Constitutive Modeling
10:30 AM - Materials Challenges in Nanostructured ZnO-Conjugated Polymer Photovoltaic Devices
FRIDAY - 5/1
10:00 AM - Mechanical Characterization and Modeling; Examples in Electrically Enhanced Instrumented Indentation and Stresses in Semiconductor Heterstructures
10:30 AM - Beyond Watson and Crick: DNA as a Building Material
2:00 PM - ***NOTE: DATE/TIME CHANGE***Ion Transport Mediated by Artificial Channels
2:00 PM - Neutron Optics by SwissNeutronics: An Overview on Recent Developments and Products

MEETINGS AT NIST

4/27 -- MONDAY

10:45 AM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: New Light on an Old Problem: The Boundary of Flowing Liquids
The solid-liquid interface introduces anisotropy to a fluid and represents a singularity that may result in distinct properties as compared to the volume. For a static liquid this fact manifests in, for example, tunable absorption for molecules at functionalized interfaces. For flowing liquids the discontinuity at the interface is quantified by a phenomenological number called slip length. To understand the microscopic origin of slip the knowledge on static samples has to be complemented by measurements under shear. Neutron scattering under grazing incident beam geometry will certainly play a major role in this context. In this presentation the possibilities offered by surface sensitive scattering techniques for the field are evaluate. In the first part slip in simple liquids will be related to the structure at the solid-liquid interface. For hexadecane the amount of slip measured by complementary techniques can not be explained by a depleted layer (two-fluid model). However, very first results from gracing incidence diffraction reveal an alignment of the molecules close to the interface that may explain slip. Additional inelastic scattering experiments will allow incorporating the dynamics of the single molecules in the microscopic picture. First experiments done with triple axis under grazing incidence are very promising in this context. In the second part the focus will be on complex liquids. For a micellar system information over a large range of length scales is extracted from data collected under grazing incident beam geometry. The anisotropy introduced by the interface enforces a rearrangement of the micellar structure. It turns out that micelles prefer to grow epitaxial at an interface terminated attractively for the micelles corona. From diffuse scattering information on the lateral correlation length involved can be extracted. Micelles crystallizing at different germs start orienting but loose long range correlations with increasing overlap of the crystallites. This structural information is related to changes in the viscosity. For in situ measurements under shear load, they have combined the technique of neutron reflectivity with rheology. It turns out that shear is aligning the crystallites but decreases the long range correlations. After stopping the shear a slower relaxation of the crystalline structure is found close to the attractive interface and is additionally sensitive to the crystalline structure at the interface. This effect relates well to the molecular dynamics that were found faster in the vicinity of a repulsive interface.
Max Wolff , Uppsala University.
235 Bldg, Rm. E100. (NIST Contact: Bulent Akgun, 301-975-6469, bulent.akgun@nist.gov)


12:00 PM - OPTICAL TECHNOLOGY DIVISION SEMINAR: Spectrophotometry Workshop
The Spectrophotometry Workshop, sponsored by the Optical Technology Division at NIST, targets engineers, scientists, technicians, managers, or others involved in the design or use of optical instrumentation, optical testing, or physical sciences in which optical properties of materials are important. The format of the workshop includes lectures and closely-related laboratory exercises. The purpose of the workshop is to familiarize the students with the fundamentals of science and technology related to the accurate measurement of optical properties of materials. Upon completion of the workshop, the student should have a good understanding of the theory and practice of spectrophotometry using dispersive and Fourier-transform techniques, as well as optical scatterometry. Particular emphasis is placed on the evaluation of uncertainties in transmittance, reflectance, and Bidirectional Reflectance Distribution Function (BRDF) measurements. To register, go to http://www.nist.gov/public_affairs/confpage/090427.htm and follow the instructions.
Simon Kaplan , Physicist. David W. Allen, Thomas A. Germer, Leonard M. Hannsen, Maria E. Nadal, Eric L. Shirley, Howard W. Yoon
Metrology Building, Room B343. (NIST Contact: Simon Kaplan, 301-975-2336, simon.kaplan@nist.gov) http://physics.nist.gov/Divisions/Div844/spsc.html



4/28 -- TUESDAY

11:00 AM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: Exploring the Structure of the Neutron with Electron-Scattering Experiments Using Polarized Helium-3 Targets
Laser-polarized He-3 has long been proven to be extremely useful for exploring the structure of the neutron in electron-scattering experiments. The speaker will discuss the JLab Polarized Helium-3 program with a special emphasis on E97-110, an experiment designed to measure the generalized Gerasimov-Drell-Hearn (GDH) sum rule at low four-momentum transfers, Q^2. Based on modest yet robust theoretical arguments, this sum rule is a versatile and important tool for studying nucleon spin structure over the entire Q^2 range. At low Q^2 (0.03 to 0.3 (GeV/c)^2), such measurements serve to test Chiral Perturbation Theory and probe its limits of applicability. Their measurement will also provide new constraints on understanding the neutron and He-3 spin structure and a better understanding of the effect of nucleon resonances. Preliminary results will be presented. In addition, recent advances in polarized He-3 targets will be discussed. Using spin-exchange optical pumping (SEOP), the He-3 polarization of these high-density (10 amagats) two-chamber target cells now regularly approaches 70\%. This remarkable performance has been achieved by taking advantage of both alkali-hybrid SEOP and high-power spectrally-narrowed diode lasers. The speaker will share lessons learned about applying these new technologies.
Jaideep Singh , University of Virginia. ,.
235 Bldg, Rm. E100. (NIST Contact: Thomas Gentile, 301-975-5431, thomas.gentile@nist.gov)



4/29 -- WEDNESDAY

10:00 AM - CERAMICS DIVISION SEMINAR: Challenges in Understanding Intergranular Fracture in Polycrystals
Intergranular fracture in polycrystals is often simulated by finite elements coupled to a cohesive zone model for the interfaces, requiring cohesive laws (stress-strain curves which describe the debonding of the interface) for grain boundaries as a function of their geometry. We discuss three challenges in understanding intergranular fracture in polycrystals. First, 3D grain boundary geometries comprise a five dimensional space. Second, the energy and peak stress of grain boundaries have singularities for all commensurate grain boundaries, especially those with short repeat distances. Thirdly, fracture nucleation and growth depends not only upon the properties of grain boundaries, but in crucial ways on edges, corners, and triple junctions of even greater geometrical complexity. To address the first two challenges, we explore the physical underpinnings for creating functional forms to capture the heirarchical commensurability structure in the grain boundary properties. We examine the third challenge by comparing a fully atomistic simulation of a silicon polycrystal to a finite element simulation with a similar overall geometry. To address this challenge, we demonstrate a method for atomistically extracting the fracture properties of geometrically complex local regions on the fly from within a finite element simulation.
Valerie Coffman , Mathematical and Computational Sciences Division, NIST.
Materials Building, Rm. A250. (NIST Contact: Robert Cook, 301-975-3207, robert.cook@nist.gov)


10:30 AM - CHEMICAL SCIENCE AND TECHNOLOGY LABORATORY OFFICE SEMINAR: CSTL Colloquium: "Measuring the Microbial World"
"Measuring the Microbial World" The Human Genome Project provided a number of unanticipated benefits to the life sciences research community. For example, the cost of sequencing dropped precipitously, and sophisticated computational tools were developed to analyze large sequence data bases. Together, these two developments made it possible to extend genomic analysis to many organisms in addition to humans. No part of the living world was more affected by this new capability than the world of microbes. Woese's analysis of highly conserved genes by PCR had already revealed that microbes were much more diverse than previously imagined, but the ability to sequence the DNA of entire microbial communities––an approach called metagenomics––has made this diverse microbial world amenable to in-depth study for the first time. Two recent reports by the Board on Life Sciences at the National Academies highlighted some of the implications of this capability. The New Science of Metagenomics discusses the emergence of this new approach to microbial communities, and provides recommendations about measures federal agencies can take to ensure that the field reaches its full potential. Treating Infectious Diseases in a Microbial World discusses the role of microbial communities in human health and the possibility that better understanding of the human 'microbiome' could lead to more effective antimicrobial therapeutics.
Ann Reid , Sr. Program Office, NAS, Board on Life Sciences, Washington, DC.
Administration Bldg, Red Auditorium. (NIST Contact: Mike Amos, 301-975-8631, mamos@nist.gov)


2:00 PM - NOTE NEW TIME *** BIOCHEMICAL SCIENCE DIVISION SEMINAR *** NOTE NEW TIME: Instrumentation for a New Realm of Imaging Using Neutron Radiation
Neutrons are an effective radiation for investigating material properties and kinetic phenomenon. Neutron radiography leverages many attributes of the neutron to visualize properties that are otherwise hidden from visible, x-ray, or charged particle imaging. Of special note is the highly penetrating nature of neutrons through most high-Z materials regardless of electrical or chemical structure. Although hydrogenous structures and several other elements of interest produce strong contrast in imaging studies, substitution of different isotopes of hydrogen makes possible system dynamics studies. Quantitative distributions of hydrogen are determined in near real-time, even when the areas of study are concealed in massive environmental containment. However the progress and application of neutron radiography in the submicrometer dimensions has been prevented by limited spatial resolution from neutron detectors, inadequate by several orders of magnitude or more in some cases. Today the best neutron detector resolution for imaging is about 20 µm square and real-time position sensitive detectors are less capable to at 30 µm to 130 µm. In this talk a new detection system under development is described that could capture images with linear resolutions of less than 0.1 µm. Possible applications will be presented with discussion of ideas solicited from the audience on research from nanoparticles to health and energy for guidance on instrument construction.
Greg Downing , Analytical Chemistry Division, NCNR.
227 Bldg, Rm. A202. (NIST Contact: Jayne Morrow, 301-975-6722, jayne.morrow@nist.gov)



4/30 -- THURSDAY

10:00 AM - CERAMICS DIVISION SEMINAR: Compressive Properties of Cu with Sub-Micron to Nanometer Grain Sizes: Synthesis, Experiment, and Constitutive Modeling
The introduction of ultrafine grained (ufg, 100 nm d 1µm) and nanocrystalline (nc, d 100 nm) materials as a major field in modern material science by Gleiter1 in 1981, and the inspiration from the results of Hall2 and Petch3 investigations which correlate the strength of the polycrystalline material to the size of its grains (? d?1/2) have motivated many researchers to develop different techniques to prepare ufg and nc materials, and to study their mechanical properties as the substrate average grain size is reduced into nanometer realm.
Babak Farrokh , University of Maryland Baltimore County.
Materials Building, Rm. A250. (NIST Contact: Robert Cook, 301-975-3207, robert.cook@nist.gov)


10:30 AM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Materials Challenges in Nanostructured ZnO-Conjugated Polymer Photovoltaic Devices
It has been widely recognized that increasing the sources of clean energy is absolutely critical for maintaining living standards while halting environmental degradation. Solar energy holds a great promise as a clean energy source, but current technologies are too expensive for wide usage. In addition to traditional semiconductor solar cells, organic photovoltaics (OPVs) have been targeted for inexpensive, lightweight applications, such as consumer electronics and field deployable sensors. A subset of OPVs, called hybrid solar cells, uses a wide bandgap oxide semiconductor as the electron acceptor. They take advantage of the environmental stability and high electron mobilities of metal oxide semiconductors, while largely retaining the solution-based processing available to organic semiconductor devices. In addition, the use of ordered nanostructures increases the area of the heterojunction, resulting in increased dissociation of photogenerated excitons and collection of charges. We focus on nanostructured ZnO – polythiophene (P3HT) heterojuctions. The challenges are to form oxide nanostructures with spacings that match the exciton diffusion length in conjugated polymers (~ 10 nm), to infiltrate high-molecular weight polymer in the dense oxide matrix, and to achieve efficient charge transfer at the heterojunction interface. In this talk, I will discuss progress made on each of the challenges and discuss future directions.
Julia W. P. Hsu , Sandia National Laboratories.
Bldg. 217, Rm. H107. (NIST Contact: Nikolai Zhitenev, 301-975-6039, nikolai.zhitenev@nist.gov)



5/1 -- FRIDAY

10:00 AM - CERAMICS DIVISION SEMINAR: Mechanical Characterization and Modeling; Examples in Electrically Enhanced Instrumented Indentation and Stresses in Semiconductor Heterstructures
Two contemporary applications of mechanics include the characterization of films and surfaces and engineering stress and stress-induced defects in semiconductor electronic and opto-electronic materials. Recent and ongoing work in these two areas of research is presented. The primary tool for mechanical characterization of surfaces and films is instrumented indentation using the Oliver-Pharr data analysis method. However, this method measures contact area between the indenter and sample indirectly, thus confounding instrumented indentation tests when characterizing dynamic properties, thin films, and materials that "pile-up" around the indenter. An electrical technique is demonstrated that continuously measures the in-situ contact area using non-linear electrical contact current-voltage (I-V) curves. This approach can be used to measure hardness continuously during loading. Challenges in interpreting the non-linear contact I-V curve are presented along with observations of dynamic mechanical response. The method's potential and future directions are also discussed. Modeling stress and strain continues to play an important role in the design and fabrication of semiconductor devices and materials. Applications include strain-engineering charge carrier mobility and electronic states, and designing defect-free semiconductor metamaterials and devices. The effects of stress on epitaxial quantum dots are modeled with a focus on GeSi quantum dots grown on a Si substrate and InGaAs quantum dots grown on a GaAs substrate. These quantum dots have unique electronic and opto-electronic properties and form spontaneously as a stress-relief mechanism, a process dubbed self-assembly. The models address defect formation in epitaxial quantum dots as well as stress effects on gross quantum dot morphology such as spacing, alignment and order. Modeling methods employed include discrete dislocation, finite element, and nonlinear spectral modeling. Future modeling directions such as vicinal surface growth and quantum dot molecules are also briefly discussed.
Lawrence Friedman , Penn State University.
Materials Building, Room A250. (NIST Contact: Robert Cook, 301-975-3207, robert.cook@nist.gov)


10:30 AM - NIST COLLOQUIUM SERIES: Beyond Watson and Crick: DNA as a Building Material
Nearly 30 years ago, Ned Seeman proposed to use DNA as a set of programmable molecular tinkertoys. His goal was to create 3D latticeworks for protein crystallography and scaffolds for nanoelectronic devices. Today, such crystals have been achieved---and much more. We can now fold long strands of DNA, origami-like, into any desired 2D or 3D shape, and these 100 nm single molecules can be decorated with components at 5 nm resolution. How will we use these structures, turn them into functional devices, and integrate them with conventional microfabrication? Initial attempts to answer these questions will be discussed, including the precise positioning of DNA origami on silicon and the use of DNA origami to create a carbon nanotube field effect transistor.
Paul W.K. Rothemund , Computation and Neural Systems Department, California Institute of Technology.
Administration Building, Green Auditorium. (NIST Contact: Kum Ham, 301-975-4203, kham@nist.gov)
Special Assistance Available


2:00 PM - SEMICONDUCTOR ELECTRONICS DIVISION SEMINAR: ***NOTE: DATE/TIME CHANGE***Ion Transport Mediated by Artificial Channels
Our goal is to develop artificial ion channels that can be actuated by light. Light gated artificial ion channels could eliminate the stochastic nature of artificial ion channels. Such a reversible photocontrol should be a powerful tool for using artificial ion channels as the basis for the development of new pharmaceuticals and drug delivery systems, as photoswitches, and in the field of microfluidics. Our system is divided in two regions: the gate part and the body part. The gate part is based on fast, light-driven azo groups that use steric differences between trans and cis isomers. The azo groups are attached to the transmembrane artificial ion channel body part formed by calix[4]resorcinarene. Such photochromic systems are reversible, switchable and exhibit photo-responsive conformational effects under different irradiation conditions. Channel activity will be suppressed and reversibly revived by UV-Vis irradiations. Information about artificial channel activity are provided by the planar lipid bilayer technique.
Laura Steller , Lebiniz Institute.
Technology Building, Room A362. (NIST Contact: Joe Reiner, 301-975-4358, joseph.reiner@nist.gov)


2:00 PM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: Neutron Optics by SwissNeutronics: An Overview on Recent Developments and Products
SwissNeutronics is one of two neutron guide manufacturers that are currently manufacturing neutron guides for the NIST Center for Neutron Research expansion.
Christian Schanzer , SwissNeutronics, Switzerland. ,.
235 Bldg, Rm. E100. (NIST Contact: Don Pierce, 301-975-6965, donald.pierce@nist.gov)



ADVANCE NOTICE

5/8/09 8:30 AM - STANDARDS SERVICES DIVISION SEMINAR: Promoting Education about Standardization in North America
Today, major changes are taking place that will likely affect standards education in the future. Standards organizations are reconfiguring themselves along new lines - organizationally as well as geographically. At the same time, many educational organizations are reaching out to create new ties among non-academic communities. The role that standards play in innovation, competitiveness and international trade is also becoming more readily acknowledged. Given the changing environment this workshop looks to build on the foundation of the work being done by ICES, the ANSI Committee on Education and the 2008 NIST workshop on education about standardization. Participants will learn about existing course offerings and lessons learned from both academic and industry representatives and will discuss different pedagogical alternatives and future strategies for developing, delivering and promoting standards education curricula in North America.
Don Purcell , Chairman, Center for Global Standards Analysis. John Bagby , Penn State University. Other speakers will be Jim Oshelfsky, ASTM International and D. Linda Garcia, Georgetown University
Administration Bldg, Employees Lounge. (NIST Contact: Erik Puskar, 301-975-8619, erik.puskar@nist.gov) http://ts.nist.gov/Standards/Promoting-Education-About-Standardization.cfm


5/20/09 1:30 PM - WORLD METROLOGY DAY: NIST Celebration - May 20th: Metrology Underpinning Economic Development
Join us for NIST's 3rd annual celebration of World Metrology Day. This year's theme is Metrology Underpinning Economic Development and will give us some insight into how our global economy is impacted by measurement. Topics: U.S. Metric Transition: Maximizing Opportunities and Reducing Barriers to Increase SI Use, Elizabeth J. Gentry (NIST) When is a Pound of Fish Only Fourteen Ounces?, Lisa Weddig (National Fisheries Institute) Reception and Poster Session to follow. NIST laboratories will have posters on display related to this year's theme in the Hall of States after the speaker session is finished.
Elizabeth Gentry , NIST Weights and Measures Division, Metric Program, Gaithersburg, MD. Lisa Weddig , Director, Regulatory and Technical Affairs, National Fisheries Institute, McLean, VA. 3rd Speaker, TBD
Administration Bldg, Red Auditorium. (NIST Contact: Belinda Collins, 301-975-4500, belinda.collins@nist.gov)


5/26/09 10:30 AM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Vertical Molecular Transistors
We demonstrate a universal method in which a new type of nanometer-sized, ambipolar, vertical molecular transistor is fabricated in parallel fashion. This Central-Gate Molecular Vertical Transistor (C-Gate MolVeT) is fabricated by a combination of conventional micro-lithography techniques and self-assembly methods. Here we will show several examples which utilize this device to investigate transport phenomena on the molecular scale.
Shachar Richter , School of Chemistry and University Center for Nanoscience and Nanotechnology,Tel Aviv University,.
Bldg. 217, Rm H107. (NIST Contact: Nikolai Zhitenev, 301-975-6039, nikolai.zhitenev@nist.gov)



MEETINGS ELSEWHERE



4/27 -- MONDAY

11:00 AM - CARNEGIE INSTITUTION OF WASHINGTON/GEOPHYSICAL LAB. SEMINAR: "GLOBAL SYNTHESIS OF SHOCK AND STATIC EQUATION OF STATE DATA ON MGSIO3 PEROVSKITE, POST-PEROVSKITE AND MELT
P. Asimow , CalTech.
Bldg, Rm..
Greenewalt Bldg., GL-DTM Grounds, Carnegie Institution of Washington, DC. (NIST Contact: B. Mysen, 202-478-8900, seminar@lists.ciw.edu)




4/28 -- TUESDAY

No Scheduled Events

4/29 -- WEDNESDAY

No Scheduled Events

4/30 -- THURSDAY

No Scheduled Events

5/1 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

No Scheduled Events

TALKS BY NIST PERSONNEL


NAVE, G. (Co-Author: C.J.Sansonetti ) : WAVELENGTH CALIBRATION OF ATOMIC SPECTRA OBTAINED BY FOURIER TRANSFORM SPECTROSCOPY.
Optical Society of America topical meeting on Fourier transform spectroscopy, Vancouver, BC, Canada, 4/27.

KERBER, F. (Co-Authors: M.Aldenius , European Southern Observatory, Garching, Germany S.D'Orico , European Southern Observatory, Garching, Germany) P. Bristow, G. Nave, Y. Ralchenko, C. J. Sansonetti : WAVELENGTH CALIBRATION SOURCES FOR INSTRUMENTS ON EXTREMELY LARGE TELESCOPES.
Optical Society of America topical meeting on Fourier transform spectroscopy, Vancouver, BC, Canada, 4/27.

BRADY, K. (Co-Authors: J.Messina , Project Leader, Gaithersburg, MD, jmessina@nist.gov E.Simmon , Gaithersburg, MD, esimmon@nist.gov) : IPC 175X: MATERIAL DECLARATION STANDARD TO MEET ENVIRONMENTAL REGULATIONS.
The 11th NASA-ESA Workshop on Product Data Exchange, Boeing Kent Space Center Kent, Washington, 5/1.



ANNOUNCEMENTS


SAVE THE DATE! NCSCI'S STANDARDS INFORMATION DAY AND OPEN HOUSE, THURSDAY, MAY 14!
Do you know the standard test method that concludes "First, don't use a frozen chicken!"? Come and find out -- but even better, if you use standards in your work, need research assistance for standards, access to standards, or support in your standards committee work, visit NCSCI and learn all about our standards services. There will also be Refreshments, Prizes, and more Fun than usual! NCSCI Bldg. 222, Room B107 10 a.m. – Noon http://www.nist.gov/ncsci/ Please note: Non-NIST guests must make prior arrangements to attend. Please call 301-975-4040 or email ncsci@nist.gov. Thank you. NCSCI is your source for standards information at NIST!
NIST Contact: Aubrey Covey, 301-975-6055, aubrey@nist.gov


VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .


BALDRIGE TRAINING AT NIST
The Baldrige National Quality Program will be hosting its Examiner Preparation course for its board of Examiners each Tuesday through Friday beginning April 28 to May 22. Approximately 130 or more Examiners will be attending each week. The Baldrige Examiners will be eating breakfast in the cafeteria each day beginning at 7:15 a.m. They will use the West end serving area of the cafeteria for lunches in order to alleviate congestion in the main cafeteria serving area. Should you have any questions or concerns, please contact Jackie DesChamps at ext. 3771.
NIST Contact: Jacqueline Deschamps, 301-975-3771, jacqueline.deschamps@nist.gov




NIST WEB SITE ANNOUNCEMENTS


No Web Site announcements this week.

For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

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